| PART |
Description |
Maker |
| SB50-18K |
180V, 5A Rectifier(高频整流应用的重复反向电80V，平均整流电A 整流 180VA条整流器（高频整流应用的重复反向电压180V，平均整流电A条整流器
180V/ 5A Rectifier
Schottky Barrier Diode (Twin Type Cathode Common) 180V, 5A Rectifier
|
Sanyo Electric Co., Ltd.
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| SB100-18 |
180V, 10A Rectifier(用于高频整流应用的重复反向电180V，平均整流电0A整流
Schottky Barrier Diode
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| CFB940 CFB940A CFB940AP CFB940AQ CFD1264AQ CFD1264 |
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFD1264A
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264AQ
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940AQ
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFB940Q
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 60 - 140 hFE. Complementary CFD1264Q
2.000W Power NPN Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 60 - 240 hFE. Complementary CFB940A
2.000W Power PNP Plastic Leaded Transistor. 150V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264P
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP
|
Continental Device India Limited
|
| 2SK2491 |
VZ Series Power MOSFET(180V 20A)
|
SHINDENGEN[Shindengen Electric Mfg.Co.Ltd]
|
| 2SK2492 |
VZ Series Power MOSFET(180V 20A)
|
Shindengen Electric Mfg.Co.Ltd
|
| PJB649ACK |
180V; 3A; PNP epitaxial silicon transistor
|
PROMAX-JOHNTON
|
| PJ2N5551CT |
180V; 600mA NPN epitaxial silicon transistor
|
PROMAX-JOHNTON
|
| BD115 |
0.875W High Voltage NPN Metal Can Transistor. 180V Vceo, 0.200A Ic, 22 hFE.
|
Continental Device India Limited
|
| G8522-02 G8522 G8522-01 G8522-03 |
Aluminum Snap-In Capacitor; Capacitance: 100uF; Voltage: 420V; Case Size: 20x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 1000uF; Voltage: 180V; Case Size: 25x40 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 120uF; Voltage: 420V; Case Size: 25x25 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 560uF; Voltage: 180V; Case Size: 22x30 mm; Packaging: Bulk
GaAs PIN photodiode
|
Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
|
| CIL2230 CIL2230A CIL2230AGR CIL2230AY CIL2230GR CI |
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 200 - 400 hFE
0.800W General Purpose NPN Plastic Leaded Transistor. 180V Vceo, 0.100A Ic, 120 - 240 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 200 - 400 hFE
0.750W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.100A Ic, 120 - 240 hFE
|
Continental Device India Limited
|
| CR80-040 CR150-100 CR80-020LEADFREE CENTRALSEMICON |
2.5V to 5.5V, 230µA Dual Rail-to-Rail Voltage Output 10-Bit DAC with Parallel Interface in 24-lead TSSOP 80 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
150 A, 1000 V, SILICON, RECTIFIER DIODE, DO-8
80 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 200 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 600 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 400 V, SILICON, RECTIFIER DIODE, DO-5
60 A, 1200 V, SILICON, RECTIFIER DIODE, DO-5
True Bipolar Input, Dual 12-Bit, 2-Channel, Simultaneous Sampling SAR ADC; Package: TSSOP; No of Pins: 24; Temperature Range: Industrial
80 A, 800 V, SILICON, RECTIFIER DIODE, DO-5
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| BDS28AISO BDS28CISOHR BDS28AISOHR BDS28AHR BDS29CH |
DIODE TVS 180V 1500W BI 5% SMC
DIODE TVS 28V 1500W BIDIR 5% SMC 晶体管|晶体管|达林顿|进步党| 120伏特五（巴西）总裁| 30A条一（c）|的SOT - 93M号，标准
DIODE TVS 18V 1500W BIDIR 5% SMC 晶体管|晶体管|达林顿|进步党| 60V的五（巴西）总裁| 30A条一（c）|的SOT - 93M号，标准
DIODE TVS 180V 1500W UNI 5% SMC 晶体管|晶体管|达林顿|进步党| 60V的五（巴西）总裁| 30A条一（c）|的SOT - 93M
DIODE TVS 48V 1500W BIDIR 5% SMC 晶体管|晶体管|达林顿| npn型| 120伏特五（巴西）总裁| 30A条一（c）|的SOT - 93M
DIODE TVS 5.0V 1500W BID 5% SMC 晶体管|晶体管|达林顿| npn型| 120伏特五（巴西）总裁| 30A条一（c）|的SOT - 93M号，标准
|
Omron Electronics LLC Industrial Automation
|
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